MMBT8099LT1

MMBT8099LT1 Preferred Device Amplifier Transistor NPN Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Continuous Symbol VCEO VCBO VEBO IC Value 80 80 6.0 500 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER COLLECTOR 3 http://onsemi.com THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board (Note 1.) TA = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient (Note 1.) Total Device Dissipation Alumina Substrate (Note 2.) TA = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient (Note 2.) Junction and Storage Temperature Range Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 –55 to +150 Unit mW mW/°C °C/W 3 mW mW/°C °C/W °C 1 2 SOT–23 CASE 318 STYLE 6 1. FR–5 = 1.0 X 0.75 X 0.062 in. 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. MARKING DIAGRAM KB M KB = Specific Device Marking M = Date Code ORDERING INFORMATION Device MMBT8099LT1 Package SOT–23 Shipping 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2001 1 January, 2001 – Rev. 0 Publication Order Number: MMBT8099LT1/D MMBT8099LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (Note 3.) (IC = 10 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter–Base Breakdown Voltage (I...