MMBT8550

SMD General Purpose Transistor (PNP) Features  PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transistor (PNP) MMBT8550 SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT8550 Unit Conditions VCEO Collector-Emitter Voltage -25 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -1.5 A PD Total Device Power Dissipation(Note 1) 225 mW TA=25 ˚C 1.8 mW/°C Derate above 25 ˚C RθJA Thermal Resistance, Junction to Ambient 556 °C /W PD Total Device Power Dissipation, Alumina Substrate (Note 2) 300 mW TA=25 ˚C 2.4 mW/°C Derate above 25 ˚C RθJA Thermal Resistance, Junction to Ambient 417 °C /W TJ Junction Temperature -55 to +150 °C TSTG Storage Temperature Range -55 to +150 °C Note: 1. FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches.) 2. Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches.) 99.5% alumina. TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. B/PG Page 1 of 4 SMD General Purpose Transistor (PNP) MMBT8550 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol Description V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO...