MMBT9014D

MMBT9014【Switching Diode / 200mW / SOT-23】 NPN Silicon Epitaxial Planar Transistors Features ◆ Switching and AF amplifier applications PACKAGE OUTLINE Absolute Maximum Ratings【TA=25℃】 Parameter Symbol Collector Base Voltage VCBO Collector Emitter Voltage VCEO Emitter Base Voltage VEBO Collector Current Ic Power Dissipation PD DC Current Gain VCE=5V, IC=2mA VCE=5V, IC=2mA MMBT9014B MMBT9014C hFE VCE=5V, IC=2mA MMBT9014D Collector Base Breakdown Voltage IC=100μA V(BR)CBO Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Saturation Voltage Collector Cutoff Current IC=1mA IC=100μA IC=100mA, IB=5mA VCB = 50 V V(BR)CEO V(BR)EBO VCEsat ICBO Emitter Base Cutoff Current VEB = 5 V IEBO Output Capacitance VCB=10V,f=1MHz COB Gain Bandwidth Product VCE=5V, IC=10mA fT Noise Figure VCE=5V, IC=200μA, f=1KHz, RG=2KΩ NF Junction Temperature Tj Storage Temperature Range TS Min Typ Max 50 ----- 45 5 ----- ----- 100 ---...