MMBT9014【Switching Diode / 200mW / SOT-23】
NPN Silicon Epitaxial Planar Transistors
Features
◆ Switching and AF amplifie...
MMBT9014【Switching Diode / 200mW / SOT-23】
NPN Silicon Epitaxial Planar Transistors
Features
◆ Switching and AF amplifier applications
PACKAGE OUTLINE
Absolute Maximum Ratings【TA=25℃】
Parameter
Symbol
Collector Base
Voltage
VCBO
Collector Emitter
Voltage
VCEO
Emitter Base
Voltage
VEBO
Collector Current
Ic
Power Dissipation
PD
DC Current Gain
VCE=5V, IC=2mA VCE=5V, IC=2mA
MMBT9014B MMBT9014C
hFE
VCE=5V, IC=2mA MMBT9014D
Collector Base Breakdown
Voltage
IC=100μA
V(BR)CBO
Collector Emitter Breakdown
Voltage Emitter Base Breakdown
Voltage Collector Saturation
Voltage Collector Cutoff Current
IC=1mA IC=100μA IC=100mA, IB=5mA VCB = 50 V
V(BR)CEO
V(BR)EBO VCEsat
ICBO
Emitter Base Cutoff Current
VEB = 5 V
IEBO
Output Capacitance
VCB=10V,f=1MHz
COB
Gain Bandwidth Product
VCE=5V, IC=10mA
fT
Noise Figure
VCE=5V, IC=200μA, f=1KHz, RG=2KΩ NF
Junction Temperature
Tj
Storage Temperature Range
TS
Min Typ Max
50
----- 45
5
-----
----- 100
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