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MMBT9018H Datasheet

Part Number MMBT9018H
Manufacturers SEMTECH
Logo SEMTECH
Description NPN Silicon Epitaxial Planar Transistor
Datasheet MMBT9018H DatasheetMMBT9018H Datasheet (PDF)

MMBT9018G / MMBT9018H NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range SOT-23 Plastic Package Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 30 15 5 50 200 150 - 55 to + 150 Unit V V V mA mW OC OC Electrical Characteristics at Ta = 25 OC.

  MMBT9018H   MMBT9018H






Part Number MMBT9018H
Manufacturers HORNBY
Logo HORNBY
Description NPN Silicon Epitaxial Planar Transistors
Datasheet MMBT9018H DatasheetMMBT9018H Datasheet (PDF)

MMBT9018【NPN Transistors / 200mW / SOT-23】 NPN Silicon Epitaxial Planar Transistors Features ◆ Switching and AF amplifier applications PACKAGE OUTLINE Absolute Maximum Ratings【TA=25℃】 Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation DC Current Gain VCE=5V, IC=1mA VCE=5V, IC=1mA MMBT9018G MMBT9018H Collector Base Breakdown Voltage IC=100μA Collector Emitter Breakdown Voltage IC=1mA Emitter Base Breakdown Voltage IC=.

  MMBT9018H   MMBT9018H







NPN Silicon Epitaxial Planar Transistor

MMBT9018G / MMBT9018H NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range SOT-23 Plastic Package Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 30 15 5 50 200 150 - 55 to + 150 Unit V V V mA mW OC OC Electrical Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 1 mA MMBT9018G MMBT9018H Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Cutoff Current at VCB = 12 V Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Gain Bandwidth Product at VCE = 5 V, IC = 5 mA Collector Base Capacitance at VCB = 10 V, f = 1 MHz Symbol Min. hFE hFE V(BR)CBO 75 105 30 V(BR)CEO 15 V(BR)EBO 5 ICBO - VCE.


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