MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBTA05LT1/D
Driver Transistors
NPN Silicon
COLLECTOR 3 ...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBTA05LT1/D
Driver Transistors
NPN Silicon
COLLECTOR 3 1 BASE
MMBTA05LT1 MMBTA06LT1*
*Motorola Preferred Device
3
MAXIMUM RATINGS
Rating Collector – Emitter
Voltage Collector – Base
Voltage Emitter – Base
Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC MMBTA05 60 60 4.0 500 MMBTA06 80 80
2 EMITTER Unit Vdc Vdc Vdc mAdc
1 2
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
DEVICE MARKING
MMBTA05LT1 = 1H; MMBTA06LT1 = 1GM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown
Voltage (3) (IC = 1.0 mAdc, IB = 0) Emitter – Base Breakdown
Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. MMBTA05 MMBTA06 V(BR)CEO MMBTA05 MMBTA06 V(BR)EBO ICES ICBO — — 0.1 0.1 60 80 4.0 — — — — 0.1 Vdc Vd...