MMBTA42LT1G

MMBTA42LT1G, MMBTA43LT1G High Voltage Transistors NPN Silicon Features These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Characteristic Symbol Value Unit Collector −Emitter Voltage VCEO Vdc MMBTA42 300 MMBTA43 200 Collector −Base Voltage MMBTA42 MMBTA43 VCBO 300 200 Vdc Emitter −Base Voltage VEBO Vdc MMBTA42 6.0 MMBTA43 6.0 Collector Current − Continuous THERMAL CHARACTERISTICS Characteristic IC 500 Symbol Max mAdc Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Function...