SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBO...
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Collector Power Dissipation
VCBO VCEO VEBO
IC PC *
40 30 10 400 350
Junction Temperature
Tj 150
Storage Temperature
Tstg -55 150
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
UNIT V V V mA mW
MMBTA517
EPITAXIAL PLANAR NPN TRANSISTOR
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10 Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
C N K J
P7
Q 0.1 MAX
M
1. EMITTER 2. BASE 3. COLLECTOR
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation
Voltage Base-Emitter Saturation
Voltage Current Gain Bandwidth Product
V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO hFE VCE(sat) VBE(sat) fT
Collector Output Capacitance
Cob
TEST CONDITION IC=0.1mA IC=10mA IE=-1.0mA VCB=40V VEB=10V IC=100mA, VCE=2V IC=100mA, IB=1mA IC=100mA, IB=10mA IC=100mA, f=100MHz, VCE=2V VCB=10V, f=1MHz
MIN. 40 30 10 30K -
TYP. 1.5
220 5
MAX. 1 1 1 2 -
UNIT V V V A A
V V MHz pF
1999. 11. 30
Revision No : 3
1/2
MMBTA517
1999. 11. 30
Revision No : 3
2/2
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