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MMBTA56 Datasheet

Part Number MMBTA56
Manufacturers TAITRON
Logo TAITRON
Description SMD General Purpose Transistor
Datasheet MMBTA56 DatasheetMMBTA56 Datasheet (PDF)

SMD General Purpose Transistor (PNP) MMBTA55/MMBTA56 SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBTA55 MMBTA56 VCEO VCBO VEBO IC Marking Code Collector-Emitter Voltage Collector-Base Vo.

  MMBTA56   MMBTA56






Part Number MMBTA56
Manufacturers LITE-ON
Logo LITE-ON
Description PNP GENERAL PURPOSE TRANSISTOR
Datasheet MMBTA56 DatasheetMMBTA56 Datasheet (PDF)

PNP GENERAL PURPOSE TRANSISTOR MMBTA55 thru MMBTA56 REVERSE VOLTAGE – 60 to 80 Volts FORWARD CURRENT – 0.5 Amperes FEATURES • Surface mount device • Simplifies circuit design • Reduces board space • Reduces component count SOT-23 MECHANICAL DATA • Case: SOT-23 plastic • Lead Free in RoHS 2002/95/EC Compliant • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unles.

  MMBTA56   MMBTA56







Part Number MMBTA56
Manufacturers HOTTECH
Logo HOTTECH
Description PNP Transistor
Datasheet MMBTA56 DatasheetMMBTA56 Datasheet (PDF)

Plastic-Encapsulate Transistors FEATURES Epitaxial planar die construction. Complementary NPN types available Marking:2GM MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -80 VCEO -80 VEBO -4 IC 500 PC 300 TJ 150 Tstg -55 to +150 Unit V V V mA mW ELECTRICAL CHARACTERISTICS (Tamb=25 unles.

  MMBTA56   MMBTA56







Part Number MMBTA56
Manufacturers GME
Logo GME
Description PNP General Purpose Transistor
Datasheet MMBTA56 DatasheetMMBTA56 Datasheet (PDF)

PNP General Purpose Transistor FEATURES  Epitaxial planar die construction.  Complementary NPN types available (MMBTA05/MMBTA06). Pb Lead-free Production specification MMBTA55/A56 APPLICATIONS  Ideal for medium NPN amplification and switching. ORDERING INFORMATION Type No. Marking MMBTA55 MMBTA56 2H 2GM SOT-23 Package Code SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter MMBTA55 MMBTA56 VCBO collector-base voltage -60 -80 VCEO collector-emi.

  MMBTA56   MMBTA56







Part Number MMBTA56
Manufacturers Fairchild
Logo Fairchild
Description PNP Amplifier
Datasheet MMBTA56 DatasheetMMBTA56 Datasheet (PDF)

MMBTA56 / PZTA56 — PNP General-Purpose Amplifier February 2015 MMBTA56 / PZTA56 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier applications at collector currents to 300 mA. Sourced from process 73. C E SOT-23 Mark: 2G B Figure 1. MMBTA56 Device Package C SOT-223 E C B Figure 2. PZTA56 Device Package Ordering Information Part Number MMBTA56 PZTA56 Marking 2G A56 Package SOT-23 3L SOT-223 4L Packing Method Tape and Reel Tape and Reel.

  MMBTA56   MMBTA56







Part Number MMBTA56
Manufacturers NTE
Logo NTE
Description Silicon PNP Transistor
Datasheet MMBTA56 DatasheetMMBTA56 Datasheet (PDF)

MMBTA56 Silicon PNP Transistor General Purpose Amplifier Absolute Maximum Ratings: Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −80V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −80V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

  MMBTA56   MMBTA56







SMD General Purpose Transistor

SMD General Purpose Transistor (PNP) MMBTA55/MMBTA56 SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBTA55 MMBTA56 VCEO VCBO VEBO IC Marking Code Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous 2H/B55 -60 -60 2GM/B56 -80 -80 -4.0 -500 Thermal Characteristics Symbol Ptot RθJA Ptot RθJA TJ, TSTG Description Total Device Dissipation FR-5 Board, (Note 1) TA= 25°C Derate above 25°C Thermal Resistance from Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA= 25°C, Derate above 25°C Thermal Resistance from Junction to Ambient Junction and Storage Temperature Range MMBTA55 MMBTA56 225 1.8 556 30.


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