MMBTA56LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBTA55LT1/D Driver Transistors PNP Silicon 1 BASE COLLECTOR 3 MMBTA55LT1 MMBTA56LT1* *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC MMBTA55 –60 –60 –4.0 –500 MMBTA56 –80 –80 2 EMITTER Unit Vdc Vdc Vdc mAdc 1 2 3 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) DEVICE MARKING MMBTA55LT1 = 2H; MMBTA56LT1 = 2GM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg Symbol 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(3) (IC = –1.0 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCE = –60 Vdc, IB = 0) Collector Cutoff Current (VCB = –60 Vdc, IE = 0) Collector Cutoff Current (VCB = –80 Vdc, IE = 0) MMBTA55 MMBTA56 MMBTA55 MMBTA56 V(BR)CEO V(BR)EBO ICES ICBO –60 –80 –4.0 — — — — — — –0.1 –0.1 –0.1 Vdc Vdc µAdc µAdc ON CHARACTERISTICS DC Current Gain (IC = –10 mAdc, VCE = –1.0 Vdc) DC Curre...