MMBV609LT1

www.DataSheet4U.com MMBV609LT1 Preferred Device Silicon Tuning Diode This device is designed for FM tuning, general frequency control and tuning, or any top−of−the−line application requiring back−to−back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT−23 plastic package for high volume, pick and place assembly requirements. Features http://onsemi.com High Figure of Merit − Q = 450 (Typ) @ VR = 3.0 Vdc, f = 50 MHz Guaranteed Capacitance Range Dual Diodes − Save Space and Reduce Cost Surface Mount Package Available in 8 mm Tape and Reel Monolithic Chip Provides Improved Matching Hyper Abrupt Junction Process Provides High Tuning Ratio Pb−Free Package is Available DUAL VOLTAGE VARIABLE CAPACITANCE DIODE 1 2 3 MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Total Power Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ Tstg Value 20 100 225 1.8 +125 −55 to +125 Unit Vdc mAdc mW mW/°C °C °C 1 2 3 SOT−23 (TO−236) CASE 318 STYLE 9 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 5L M G G 1 5L = Specific Device Code M = Date Code...