MMBV809LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Controlled and Uniform Tuning Ratio Available in Surface Mount Package Available in 8 mm Tape and Reel 1 ANODE 3 CATHODE MMBV809LT1 Motorola Preferred Device 4.5–6.1 pF VOLTAGE VARIABLE CAPACITANCE DIODE 3 MAXIMUM RATINGS Rating Symbol Value Reverse Voltage Forward Current Total Power Dissipation(1) @ TA = 25°C Derate above 25°C VR IF PD 20 20 225 1.8 Junction Temperature Storage Temperature Range 1. FR5 Board 1.0 x 0.75 x 0.62 in. TJ +125 Tstg – 55 to +125 DEVICE MARKING MMBV809LT1 = 5K ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic – All Types Reverse Breakdown Voltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 15 Vdc) Unit Vdc mAdc mW mW/°C °C °C Symbol V(BR)R IR 1 2 CASE 318 – 08...