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MMBZ16VAL

nexperia

High surge current unidirectional double ESD protection diodes

MMBZ16VAL High surge current unidirectional double ESD protection diodes 6 November 2017 Product data sheet 1. Gene...


nexperia

MMBZ16VAL

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Description
MMBZ16VAL High surge current unidirectional double ESD protection diodes 6 November 2017 Product data sheet 1. General description Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The device is designed for ESD and transient overvoltage protection of up to two signal lines. 2. Features and benefits Unidirectional protection of two lines Reverse standoff voltage: VRWM = 13 V Average measured surge robustness: IPPM = 14 A (8/20 µs) / IPPM = 2.54 A (10/1000 µs) Typical reverse leakage current: IRM = 0.1 nA AEC-Q101 qualified 3. Applications Automotive in-vehicle networks protection Industrial application Power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter VRWM reverse standoff voltage IPPM rated peak pulse current VCL clamping voltage [1] According to IEC 61643-321. [2] Measured from pin 1 or 2 to pin 3. Conditions Tj = 25 °C Min Typ Max Unit - - 13 V tp = 10/1000 µs [1] [2] - - 1.9 A IPP = 1.7 A; tp = 10/1000 µs; Tj = 25 °C [1] [2] - 19.5 23 V Nexperia MMBZ16VAL High surge current unidirectional double ESD protection diodes 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K1 cathode 2 K2 cathode 3 A common anode Simplified outline 3 Graphic symbol 3 12 TO-236AB (SOT23) 12 006aaa154 6. Ordering information Table 3. Ordering inform...




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