MMD65R600Q Datasheet
MMD65R600Q
650V 0.60Ω N-channel MOSFET
Description
MMD65R600Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as low switching loss.
Key Parameters
Parameter VDS @ Tj, max RDS(on), max
VGS(th), typ ID
Qg, typ
Value 700 0.60
3 7.3 1.
N-Channel MOSFET
MMD65R600Q Datasheet
MMD65R600Q
650V 0.60Ω N-channel MOSFET
Description
MMD65R600Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as low switching loss.
Key Parameters
Parameter VDS @ Tj, max RDS(on), max
VGS(th), typ ID
Qg, typ
Value 700 0.60
3 7.3 13.8
Unit V Ω V A nC
Package & Internal Circuit
D
D
G S
G S
Features
Low power loss by high speed switching and low on-resistance 100% avalanche tested Green Package – Pb-free plating, Halogen-free
Applications
PFC power supply stages Switching applications Adapter
Ordering Information
Order Code MMD65R600QRH
Marking 65R600Q
Temp. Range -55 ~ 150oC
Package TO-252
Packing RoHS Status
Reel
compliant
May. 2021. Revision 1.2
1
Magnachip Semiconductor Ltd.
MMD65R600Q Datasheet
Absolute Maximum Rating (Tc=25oC unless otherwise specified)
Parameter
Symbol
Rating
Unit Note
Drain – Source voltage Gate – Source voltage
Continuous drain current
Pulsed drain current(1) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness Diode dv/dt ruggedness(2) Storage temperature Maximum operating junction temperature
1) Pulse width tP limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS
VDSS VGSS
ID
IDM PD EAS dv/dt dv/dt Tstg Tj
650 ±30 7.3 4.