MMD70R900Q

MMD70R900Q Datasheet MMD70R900Q 700V 0.9Ω N-channel MOSFET  Description MMD70R900Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 750 0.9 3 5 11 Unit V Ω V A nC  Package & Internal Circuit D D G S G S  Features  Low Power Loss by High Speed Switching and Low On-Resistance  Excellent ESD robustness  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Product validation acc. JEDEC Standard   Applications  PFC Power Supply Stages  Switching Applications  Adapter  Ordering Information Order Code MMD70R900QRH Marking 70R900Q Temp. Range -55 ~ 150oC Package TO-252(2L) Packing Reel RoHS Status Compliant Jun.2021. Revision1.3 1 Magnachip Semiconductor Ltd. MMD70R900Q Datasheet  Absolute Maximum Rating (Tc=25oC unless otherwise specified) Parameter Drain – Source voltage Gate – Source voltage Continuous drain current Pulsed drain current(1) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness Diode dv/dt ruggedness(2) Storage temperature Maximum operating junction temperature 1) Pulse width tP limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS Symbol VDSS VGSS ID IDM PD EAS d...