MMD80R1K2QZ Datasheet
MMD80R1K2QZ
800V 1.2Ω N-channel MOSFET
Description
MMD80R1K2QZ is power MOSFET using Magnachip...
MMD80R1K2QZ Datasheet
MMD80R1K2QZ
800V 1.2Ω N-channel
MOSFET
Description
MMD80R1K2QZ is power
MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
Key Parameters
Parameter VDS @ Tj,max RDS(on),max
VGS(th),typ ID
Qg,typ
Value 850 1.2 3.5 4.5 11
Unit V Ω V A nC
Package & Internal Circuit
D G
S
Features
Low Power Loss by High Speed Switching and Low On-Resistance Excellent ESD robustness 100% Avalanche Tested Green Package – Pb Free Plating, Halogen Free
Applications
PFC Power Supply Stages Switching Applications Adapter
Ordering Information
Order Code
Marking Temp. Range
MMD80R1K2QZRH 80R1K2QZ -55 ~ 150 oC
Jan. 2021. Revision 1.1
1
Package TO-252(2L)
Packing Reel
RoHS Status Compliant
Magnachip Semiconductor Ltd.
MMD80R1K2QZ Datasheet
Absolute Maximum Rating (Tc=25 oC unless otherwise specified)
Parameter Drain – Source
voltage Gate – Source
voltage
Continuous drain current
Pulsed drain current(1) Power dissipation Single - pulse avalanche energy
MOSFET dv/dt ruggedness Diode dv/dt ruggedness(2) Storage temperature Maximum operating junction temperature
1) Pulse width tP limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS
Symbol VDSS VGSS
ID
IDM PD EAS dv/dt dv/dt Tstg Tj
Rating 800 ...