MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
Order this document by MMDF2P02E/D
™ Data Sheet
Medium Power Surfac...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
Order this document by MMDF2P02E/D
™ Data Sheet
Medium Power Surface Mount Products
TMOS Dual P-Channel Field Effect Transistors
MMDF2P02E
MiniMOS™ devices are an advanced series of power
MOSFETs which utilize Motorola’s TMOS process. These miniature surface mount
MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a low reverse recovery time. MiniMOS devices are designed for use in low
voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low
voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer G additional safety margin against unexpected
voltage transients. Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs Miniature SO–8 Surface Mount Package — Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, with Soft Recovery IDSS Specified at Elevated Temperatures Avalanche Energy Specified Mounting Information...