MMDF3N06VL
Power MOSFET 3 Amps, 60 Volts
N−Channel SO−8, Dual
Designed for low voltage, high speed switching applicatio...
MMDF3N06VL
Power
MOSFET 3 Amps, 60 Volts
N−Channel SO−8, Dual
Designed for low
voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected
voltage transients.
Features
On−resistance Area Product about One−half that of Standard
MOSFETs with New Low
Voltage, Low RDS(on) Technology
Faster Switching than E−FETt Predecessors Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature Static Parameters are the Same for both TMOS V and TMOS E−FET Miniature SO−8 Surface Mount Package − Saves Board Space Mounting Information for SO−8 Package Provided
http://onsemi.com
VDSS 60 V
RDS(ON) TYP 130 mΩ
ID MAX 3.0 A
N−Channel D
G S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source
Voltage
Drain−to−Gate
Voltage, (RGS = 1 MΩ)
Gate−to−Source
Voltage − Continuous
Drain Current − Continuous @ TA = 25°C Drain Current − Continuous @ TA = 100°C Drain Current − Single Pulse (tp ≤ 10 ms)
Total Power Dissipation @ TA = 25°C (Note 1)
VDSS
VDGR
VGS
ID ID IDM
PD
60
Vdc
60
Vdc
± 15 Vdc
3.3
Adc
0.7
10
Apk
2.0
W
Operating and Storage Temperature Range TJ, Tstg −55 to °C 150
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, Peak IL = 3.3 Apk, L ...