MMDF4P03HD

MMDF4P03HD Preferred Device Power MOSFET 4 A, 30 V, P−Channel SO−8, Dual Dual MOSFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive − Can Be Driven by Logic ICs Miniature SO−8 Surface Mount Package − Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Mounting Information for SO−8 Package Provided MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C Drain Current − Single Pulse (tp ≤ 10 ms) Source Current − Continuous @ TA = 25°C Total Power Dissipation @ TA = 25°C (Note 1) VDSS VGS ID IDM IS PD 30 Vdc ± 20 Vdc 4.0 Adc 20 Apk 1.7 Adc 2.0 Watts Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W) Thermal Resistance − Junction−to−Ambient Maximum Lead Temp...