MMDT4401

Elektronische Bauelemente MMDT4401 NPN Plastic-Encapsulate Multi-Chip Transistor RoHS Compliant Product SOT-363 * Features Power Dissipation. PCM : 0.2 W (Temp.=25OC) Collector Current ICM : 0.6 A Collector-Base vVoltage V(BR) CBO : 60 V Operating & Storage Junction Temperature Tj,T stg : -55OC ~ +150OC C2 B1 E1 E2 B2 C1 Marking : K2X .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF 8o 0o .096(2.45) .085(2.15) .053(1.35) .045(1.15) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .043(1.10) .035(0.90) .018(0.46) .010(0.26) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS˄Tamb=25ćunless otherwise specified˅ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transit...