MMF60R280Q Datasheet
MMF60R280Q
600V 0.28Ω N-channel MOSFET
Description
MMF60R280Q is power MOSFET using Magnachip’s ...
MMF60R280Q Datasheet
MMF60R280Q
600V 0.28Ω N-channel
MOSFET
Description
MMF60R280Q is power
MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
Key Parameters
Parameter VDS @ Tj,max RDS(on),max
VTH,typ ID
Qg,typ
Value 650 0.28
3 13.8 25
Unit V Ω V A nC
Package & Internal Circuit D
GDS
G S
Features
Low Power Loss by High Speed Switching and Low On-Resistance
100% Avalanche Tested
Green Package – Pb Free Plating, Halogen Free
Applications
PFC Power Supply Stages Switching Applications Adapter
Ordering Information
Order Code MMF60R280QTH
Marking 60R280Q
Temp. Range -55 ~ 150oC
Package TO-220F
Packing Tube
RoHS Status Compliant
Jun. 2021. Revision 1.2
1
Magnachip Semiconductor Ltd.
MMF60R280Q Datasheet
Absolute Maximum Rating (Tc=25oC unless otherwise specified)
Parameter Drain – Source
voltage Gate – Source
voltage
Symbol VDSS VGSS
Continuous drain current(1)
ID
Pulsed drain current(2)
Power dissipation
Single - pulse avalanche energy
MOSFET dv/dt ruggedness
Diode dv/dt ruggedness(3)
Storage temperature Maximum operating junction temperature
1) Id limited by maximum junction temperature 2) Pulse width tP limited by Tj,max 3) ISD ≤ ID, VDS peak ≤ V(BR)DSS
IDM PD EAS dv/dt dv/dt T...