MMF80R450QZ

MMF80R450QZ Datasheet MMF80R450QZ 800V 0.45Ω N-channel MOSFET  Description MMF80R450QZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VGS(th),typ ID Qg,typ Value 850 0.45 3.5 11 25 Unit V Ω V A nC  Package & Internal Circuit GDS  Features  Low Power Loss by High Speed Switching and Low On-Resistance  Excellent ESD robustness  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Ordering Information Order Code Marking Temp. Range Package MMF80R450QZTH 80R450QZ -55 ~ 150 oC TO-220F(3L) Jun. 2021. Revision 1.2 1 Packing Tube RoHS Status Compliant Magnachip Semiconductor Ltd. MMF80R450QZ Datasheet  Absolute Maximum Rating (Tc=25 oC unless otherwise specified) Parameter Drain – Source voltage Gate – Source voltage Symbol VDSS VGSS Continuous drain current(1) ID Pulsed drain current(2) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness Diode dv/dt ruggedness(3) Storage temperature Maximum operating junction temperature 1) ID limited by maximum junction temperature 2) Pulse width tP limited by Tj,max 3) ISD ≤ ID, VDS peak ≤ V...