August 2019
PRODUCT FEATURES
□ IGBT chip in trench FS-technology □ Low switching losses □ VCE(sat) with positive tempera...
August 2019
PRODUCT FEATURES
□ IGBT chip in trench FS-technology □ Low switching losses □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Temperature sense included
APPLICATIONS
□ Welding Machine □ Power Supplies □ Others
MMG150S120B6UC
Version 01
1200V 150A IGBT Module RoHS Compliant
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES VGES
Collector Emitter
Voltage Gate Emitter
Voltage
TJ=25℃
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25℃,TJmax=175℃ TC=100℃,TJmax=175℃ tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25℃,TJmax=175℃
Values
Unit
1200 V
±20
238
150
A
300
1000
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse
Voltage
TJ=25℃
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125℃, t=10ms, VR=0V
Values
Unit
1200
V
150 A
300
3200
A2S
MacMic Science & Technology Co., Ltd.
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website ：www.macmicst.com
MMG150S120B6UC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold
Voltage
VCE=VG...
