February 2016
PRODUCT FEATURES
□ IGBT3 CHIP(1700V Trench+Field Stop technology) □ Low turn-off losses, short tail curren...
February 2016
PRODUCT FEATURES
□ IGBT3 CHIP(1700V Trench+Field Stop technology) □ Low turn-off losses, short tail current □ VCE(sat) with positive temperature coefficient □ DIODE CHIP(1700V EMCON 3 technology) □ Free wheeling diodes with fast and soft reverse recovery
MMG150WB170H6EN
Version 01
1700V 150A Four-Pack Module RoHS Compliant
APPLICATIONS
□ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES VGES
Collector Emitter
Voltage Gate Emitter
Voltage
TJ=25℃
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25℃, TJmax=175℃ TC=95℃, TJmax=175℃ tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25℃, TJmax=175℃
Values
Unit
1700 V
±20
230
150
A
300
1250
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse
Voltage
TJ=25℃
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125℃, t=10ms, VR=0V
Values
Unit
1700
V
150 A
300
3800
A2S
MacMic Science & Technology Co., Ltd.
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website ：www.macmicst.com
MMG150WB170H6EN
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Para...
