MMG200Q120B6TC Datasheet
September 2020
PRODUCT FEATURES
□ IGBT CHIP(Trench+Field Stop technology) □ VCE(sat) with positive temperature coefficient □ High short circuit capability □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low switching losses
APPLICATIONS
□ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems
MMG200Q120B6TC
Version 01
1200V 200A IGBT Module RoHS Compliant
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25℃
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25℃, TJmax=175℃ TC=100℃, TJmax=175℃
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25℃, TJmax=175℃
Values
Unit
1200 V
±20
300
200
A
400
1071
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse V.
April 2015
MMG200Q120B6TN
Version 01
1200V 200A IGBT Module RoHS Compliant
PRODUCT FEATURES
□ IGBT3 CHIP(Trench+Field Stop technology) □ High short circuit capability,self limiting short circuit current □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low switching losses
APPLICATIONS
□ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25℃
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25℃ TC=80℃
ICM
Repetitive Peak C.
IGBT
September 2020
PRODUCT FEATURES
□ IGBT CHIP(Trench+Field Stop technology) □ VCE(sat) with positive temperature coefficient □ High short circuit capability □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low switching losses
APPLICATIONS
□ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems
MMG200Q120B6TC
Version 01
1200V 200A IGBT Module RoHS Compliant
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25℃
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25℃, TJmax=175℃ TC=100℃, TJmax=175℃
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25℃, TJmax=175℃
Values
Unit
1200 V
±20
300
200
A
400
1071
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25℃
IF(AV) Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms TJ =125℃, t=10ms, VR=0V
Values 1200 200 400 11.25
Unit V
A
KA2S
MacMic Science & Technology Co., Ltd.
Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.:+86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website:www.macmicst.com
MMG200Q120B6TC
MMG200Q120B6TC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
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2021-07-18 : MMG200Q120B6TC MMG200Q120B6HN XC9140B XC9140C XC6501B XC6192AA10ER-G XC6192A XC9140A XC6501A OPB981