MMG200Q120B6TN

April 2015 MMG200Q120B6TN Version 01 1200V 200A IGBT Module RoHS Compliant PRODUCT FEATURES □ IGBT3 CHIP(Trench+Field Stop technology) □ High short circuit capability,self limiting short circuit current □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low switching losses APPLICATIONS □ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems IGBT-inverter ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃ TC=80℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT T C =25°C unless otherwise specified Values Unit 1200 ±20 V 290 200 A 400 1050 W Diode-inverter ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions T C =25°C unless otherwise specified Values Unit VRRM Repetitive Reverse Voltage TJ=25℃ 1200 V IF(AV) IFRM I2t Average Forward Current Repetitive Peak Forward Current TC=25℃ tp=1ms TJ =125℃, t=10ms, VR=0V 200 400 A 7750 A2S MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China 1 Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com MMG200Q120B6TN IGBT-inverter ELECTRICAL CHARACTERISTICS Symbol Parameter/Test Conditions T C =25°C unless ...