MMN400A006U1

August 2016 MMN400A006U1 60V 400A N-ch Power MOSFET Module Preliminary RoHS Compliant PRODUCT FEATURES □ RDS(ON).typ=0.35mΩ@VGS=10V □ 175℃operating temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside □ Inside the module,each MOSFET chip has a gate resistance:2.2Ω APPLICATIONS □ High efficiency DC/DC Converters □ ISG EV Products □ UPS inverter Type MMN400A006U1 VDS 60V ID 400A RDS(ON).max TJ=25℃ 0.75mΩ TJmax 175℃ Marking MMN400A006U1 Package NA ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VDSS Drain - Source Voltage TJ=25℃ VGSS Gate - Source Voltage ID Continuous Drain Current TC=25℃, TJmax=175℃ TC=110℃, TJmax=175℃ IDM Pulsed Drain Current at VGS=10V Limited by TJmax PD Maximum Power Dissipation TC=25℃, TJmax=175℃ EAS Single Pulse Avalanche Energy VDD=50V,L=1mH Values 60 ±20 610 400 800 1000 T...