August 2016
MMN400A010U1
100V 400A N-ch Power MOSFET Module
Preliminary
RoHS Compliant
PRODUCT FEATURES
□ RDS(ON).t...
August 2016
MMN400A010U1
100V 400A N-ch Power
MOSFET Module
Preliminary
RoHS Compliant
PRODUCT FEATURES
□ RDS(ON).typ=1.1mΩ@VGS=10V □ 175℃operating temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside □ Inside the module,each
MOSFET chip has a gate resistance:2.2Ω
APPLICATIONS
□ High efficiency DC/DC Converters □ ISG EV Products □ UPS inverter
Type MMN400A010U1
VDS 100V
ID 400A
RDS(ON).max TJ=25℃ 1.4mΩ
TJmax 175℃
Marking MMN400A010U1
Package NA
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VDSS VGSS
Drain - Source
Voltage Gate - Source
Voltage
TJ=25℃
ID
Continuous Drain Current
IDM
Pulsed Drain Current at VGS=10V
TC=25℃, TJmax=175℃ TC=100℃, TJmax=175℃ Limited by TJmax
PD
Maximum Power Dissipation
EAS
Single Pulse Avalanche Energy
TC=25℃, TJmax=175℃ VDD=50V,L=1mH
Values
Unit
100 V
±20
550
400
A
800
1071
W
3000
mJ
THERMAL AND MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
RthJC Thermal resistance,junction to case Per
MOSFET
Values
Unit
0.14
K/W
TJmax TSTG
Max. Junction Temperature Storage Temperature Range
175 ℃
-40~125
to heatsink Torque
to terminal
Recommended(M5) Recommended(M5)
2.5~5 Nm
2.5~5
Weight
110
g
MacMic Science & Technology Co., Ltd.
Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.:+86-519-851...