MMN600DB015B

April 2015 MMN600DB015B 150V 600A N-ch Power MOSFET Module Version 0 RoHS Compliant PRODUCT FEATURES □ RDS(ON).typ=1.8mΩ@VGS=10V □ 175℃ junction temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside APPLICATIONS □ High efficiency DC/DC Converters □ ISG EV Products □ UPS inverter Type MMN600DB015B VDS 150V ID 600A RDS(ON).max TJ=25°C 2.1mΩ TJmax 175℃ Marking MMN600DB015B Package NDB ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions VDSS VGSS Drain Source Voltage Gate Source Voltage TJ=25℃ ID Continuous Drain Current TC=25℃ TC=100℃ IDM Pulsed Drain Current at VGS=10V PD Maximum Power Dissipation Limited by TJmax T C =25°C unless otherwise specified Values Unit 150 V ±20 850 600 A 1700 1500 W THERMAL AND MODULE CHARACTERISTICS Symbol Parameter/Test Conditions RthJC TJmax TSTG Thermal resistance,junction to case Per MOSFET Max. Junction Temperature Storage Temperature Range Torque to heatsink to terminal Recommended（M5） Recommended（M5） Weight T C =25°C unless otherwise specified Values Unit 0.1 K/W 175 -40～125 ℃ 2.5～5 Nm 2.5～5 240 g MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com 1 MMN600DB015B ELECTRICAL CHARACTERISTICS T C =25°C unless otherwise specified Symbol Parameter/T...