MMPQ3906

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier/Switch Transistor PNP Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 89 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous VCEO VCB VEB IC –40 –40 –5.0 –200 Each Transistor Four Transistors Equal Power Vdc Vdc Vdc mAdc Power Dissipation @ TA = 25°C Derate above 25°C PD 0.4 3.2 800 mW 6.4 mW/°C Power Dissipation @ TC = 25°C Derate above 25°C PD 0.66 5.3 1.92 Watts 15.4 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –30 Vdc, IE = ...