DatasheetsPDF.com

MMRF5017HS Datasheet

Part Number MMRF5017HS
Manufacturers NXP
Logo NXP
Description RF Power GaN Transistor
Datasheet MMRF5017HS DatasheetMMRF5017HS Datasheet (PDF)

NXP Semiconductors Technical Data RF Power GaN Transistor This 125 W RF power GaN transistor is capable of broadband operation from 30 to 2200 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and broadband RF applications. This part is characterized and performance is guaranteed for applications operating in the 30 to 2200 MHz band. There is no guarantee of performance when this part is used .

  MMRF5017HS   MMRF5017HS






RF Power GaN Transistor

NXP Semiconductors Technical Data RF Power GaN Transistor This 125 W RF power GaN transistor is capable of broadband operation from 30 to 2200 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and broadband RF applications. This part is characterized and performance is guaranteed for applications operating in the 30 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies. Typical Performance: VDD = 50 Vdc, TA = 25C Frequency (MHz) Signal Type 30–940 (1,2) CW 520 (1) CW 940 (1) CW Pout (W) 90 125 80 Gps (dB) 16.0 18.0 18.4 D (%) 45.0 59.1 44.0 2200 Pulse (100 sec, 20% Duty Cycle) 200 17.0 57.0 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin Test (W) Voltage Result 520 (1) Pulse > 10:1 at 3.4 50 No Device (100 sec, All Phase (3 dB Degradation 20% Dut.


2019-05-20 : THM30-1221    THM30-1222    THM30-1213    THM30-1215    STCH03    STW8N120K5    MCP39F511A    AK1594    STP8N120K5    MAX77324   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)