ON Semiconductort
SOD-123 Schottky Barrier Diodes
The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMB...
ON Semiconductort
SOD-123 Schottky Barrier Diodes
The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications.
Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage
MAXIMUM RATINGS
Rating
Symbol
Reverse
Voltage
MMSD301T1 MMSD701T1
VR
Forward Power Dissipation TA = 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
PF
TJ Tstg
MMSD301T1 = XT, MMSD701T1 = XH
Value 30 70 225
–55 to +125 –55 to +150
Unit Vdc
mW
°C °C
MMSD301T1 MMSD701T1
ON Semiconductor Preferred Devices
2 1 CASE 425–04, STYLE 1
SOD–123
1 Cathode
2 Anode
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Breakdown
Voltage (IR = 10 µA)
V(BR)R
Volts
MMSD301T1
30 — —
MMSD70...