NPN Silicon Epitaxial Planar Transistor
FEATURES
Power dissipation.(PC=0.2W) Complements the MMST3906.
Pb
Lead-fre...
NPN Silicon Epitaxial Planar Transistor
FEATURES
Power dissipation.(PC=0.2W) Complements the MMST3906.
Pb
Lead-free
APPLICATIONS
Audio frequency general purpose amplifier.
Production specification
MMST3904
ORDERING INFORMATION
Type No.
Marking
MMST3904
K2N
SOT-323
Package Code SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base
Voltage
60
VCEO
Collector-Emitter
Voltage
40
VEBO
Emitter-Base
Voltage
5
IC Collector Current -Continuous
200
PC Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units V V V mA mW ℃
F051 Rev.A
www.gmesemi.com
1
Production specification
NPN Silicon Epitaxial Planar Transistor
MMST3904
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown
voltage
V(BR)CBO IC=10μA,IE=0
60 V
Collector-emitter breakdown
voltage V(BR)CEO IC=1mA,IB=0
40 V
Emitter-b...
