General Purpose Transistor
MMST3906-G (PNP)
RoHS Device
Features
- Epitaxial planar die construction. - Ultra-small sur...
General Purpose Transistor
MMST3906-G (PNP)
RoHS Device
Features
- Epitaxial planar die construction. - Ultra-small surface mount package.
Mechanical data
- Case: SOT-323 , Molded plastic. - Terminals: Solderable per MIL-STD-750,
method 2026. - Mounting position: Any.
- Weight: 0.0055 grams(approx.).
Circuit Diagram
Collector 3
1 Base
2 Emitter
1. BASE 2. EMITTER 3. COLLECTOR
SOT-323
0.053(1.35) 0.045(1.15)
0.039(1.00) 0.035(0.90)
0.087(2.20) 0.079(2.00)
3
12
0.055(1.40) 0.047(1.20)
0.006(0.15) 0.003(0.08) 0.096(2.45) 0.085(2.15)
0.016(0.40) 0.008(0.20)
0.004(0.10) 0.000(0.00)
0.018(0.46) 0.010(0.26)
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature range
VCBO VCEO VEBO
IC PC RΘJA TJ TSTG
Value -40 -40 -5 -200 2...
