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MMVL109T1 Datasheet

Part Number MMVL109T1
Manufacturers LRC
Logo LRC
Description Silicon Epicap Diode
Datasheet MMVL109T1 DatasheetMMVL109T1 Datasheet (PDF)

www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. Silicon Epicap Diode MMVL109T1 Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechnaical tuning methods. 26–32 pF VOLTAGEVARIABLE CAPACITANCE DIODES 1 • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning Ratio • Surface Mount Package • Device Marking: 4A 2 PLASTIC, CASE 477 SOD– 323 ORDERING INFORMATION Device MMVL109T1 Package SOD–323 Sh.

  MMVL109T1   MMVL109T1






Part Number MMVL109T1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Silicon Epicap Diodes
Datasheet MMVL109T1 DatasheetMMVL109T1 Datasheet (PDF)

MMVL109T1 Preferred Device Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid−state reliability in replacement of mechanical tuning methods. Features • • • • High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Surface Mount Package Pb−Free Package is Available http://onsemi.com 26−32 pF VOLTAGE VARIABLE CAPACITANCE DIODES 1 CATHODE 2 ANODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forwa.

  MMVL109T1   MMVL109T1







Silicon Epicap Diode

www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. Silicon Epicap Diode MMVL109T1 Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechnaical tuning methods. 26–32 pF VOLTAGEVARIABLE CAPACITANCE DIODES 1 • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning Ratio • Surface Mount Package • Device Marking: 4A 2 PLASTIC, CASE 477 SOD– 323 ORDERING INFORMATION Device MMVL109T1 Package SOD–323 Shipping 3000 / Tape & Reel 1 CATHODE 2 ANODE MAXIMUM RATINGS Symbol VR IF Symbol PD Rating Continuous Reverse Voltage Peak Forward Current Characteristic Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Value 30 200 Max 200 1.57 635 -55 to +150 Unit Vdc mAdc Unit mW mW/°C °C/W °C THERMAL CHARACTERISTICS RθJA TJ, Tstg *FR–5 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse BreakdownVoltage (IR = 10 µAdc) Reverse Voltage Leakage Current Symbol V(BR)R Min 30 Typ — Max — Unit Vdc IR TCC — — — 300 0.1 — µAdc ppm/°C (VR = 25 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Ct, Diode Capacitance Q, Figure of Merit VR = 3.0 Vdc, f = 1.0 MHz VR = 3.0 Vdc pF f = 50 MHz Device Min Nom Max Min MMVL109T1 26 29 32 200 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc. CR, Capacitance Ratio C3/C25 f.


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