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MMVL2101T1 Datasheet

Part Number MMVL2101T1
Manufacturers LRC
Logo LRC
Description Silicon Tuning Diode
Datasheet MMVL2101T1 DatasheetMMVL2101T1 Datasheet (PDF)

www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode These devices are designed in the popular Plastic Surface Mount Package for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid–state reliability in replacement of mechanical tuning methods. MMVL2101T1 30 VOLTS VOLTAGEVARIABLE CAPACITANCEDIODE 1 • High Q • Controlled and Uniform Tuning Ratio • Standard Capacitance Tolerance – 10% • Complete Typical .

  MMVL2101T1   MMVL2101T1






Part Number MMVL2101T1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Silicon Tuning Diode
Datasheet MMVL2101T1 DatasheetMMVL2101T1 Datasheet (PDF)

www.DataSheet4U.com MMVL2101T1 Preferred Device Silicon Tuning Diode These devices are designed in the popular Plastic Surface Mount Package for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid–state reliability in replacement of mechanical tuning methods. • High Q • Controlled and Uniform Tuning Ratio • Standard Capacitance Tolerance – 10% • Complete Typical Design Curves • Device Marking: 4G http://onsemi.com 3.

  MMVL2101T1   MMVL2101T1







Silicon Tuning Diode

www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode These devices are designed in the popular Plastic Surface Mount Package for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid–state reliability in replacement of mechanical tuning methods. MMVL2101T1 30 VOLTS VOLTAGEVARIABLE CAPACITANCEDIODE 1 • High Q • Controlled and Uniform Tuning Ratio • Standard Capacitance Tolerance – 10% • Complete Typical Design Curves • Device Marking: 4G ORDERING INFORMATION Device MMVL2101T1 Package SOD–323 Shipping 3000 / Tape & Reel 2 PLASTIC, CASE 477 SOD– 323 1 CATHODE 2 ANODE MAXIMUM RATINGS Symbol VR IF Symbol PD Rating Continuous Reverse Voltage Peak Forward Current Characteristic Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Value 30 200 Max 200 1.57 635 150 Unit Vdc mAdc Unit mW mW/°C °C/W °C THERMAL CHARACTERISTICS RθJA TJ, Tstg *FR–4 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse BreakdownVoltage (IR = 10 µAdc) Reverse Voltage Leakage Current Symbol V(BR)R Min 30 Typ — Max — Unit Vdc IR TCC — — — 280 0.1 — µAdc ppm/°C (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) Device MMVL2101T1 Ct, Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Min Nom Max 6.1 6.8 7.5450 Q, Figure of Merit VR = 4.0 .


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