MMZ09312BT1

Freescale Semiconductor Technical Data Document Number: MMZ09312B Rev. 1, 2/2012 Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ09312B is a 2 -- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 400 to 1000 MHz such as CDMA, GSM, LTE and ZigBee R at operating voltages from 3 to 5 Volts. The amplifier is housed in a cost--effective, surface mount QFN plastic package. Typical Performance: VCC1 = VCC2 = VBIAS = 5 Volts, ICQ = 74 mA Frequency 900 MHz 750 MHz 450 MHz Pout (dBm) 24 17.5 29 Gps (dB) 31.5 32.0 33.0 ACPR (dBc) --50.0 --50.0 --40.0 PAE (%) 26.0 15.3 57.0 Test Signal IS--95 CDMA LTE 10/20 MHz ZigBee MMZ09312BT1 400-1000 MHz, 31.7 dB 29.6 dBm InGaP HBT CASE 2131-01 QFN 3x3 PLASTIC Features Frequency: 400--1000 MHz P1dB: 29.6 dBm @ 900 MHz Power Gain: 31.7 dB @ 900 MHz OIP3: 42 dBm @ 900 MHz Active Bias Control (adjustable externally) Single 3 to 5 Volt Supply Performs Well with Digital Predistortion Systems Single--ended Power Detector Cost--effective QFN Surface Mount Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel. http://www.DataSheet4U.net/ Table 1. Typical Performance (1) Characteristic Small--Signal Gain (S21) Input Return Loss (S11) Output Return Los...