MN101CP66D

MN101C66D, MN101C66G Type Internal ROM type ROM (byte) RAM (byte) Package (Lead-free) 64K 2K MN101C66D Mask ROM 128K MN101C66G MN101CF66G FLASH MN101CP66D EPROM 64K 4K 2K LQFP080-P-1414A LQFP080-P-1414A, (ES (Engineering Sample) available), LQFP080-P-1414A, QFP084-P-1818E QFP084-P-1818E QFP084-P-1818E 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz) 62.5 µs (at 2.0 V to 5.5 V, 32 kHz)* * The lower limit for operation guarantee for flash memory built-in type is 2.5 V. * The lower limit for operation guarantee for EPROM built-in type is 2.3 V. Minimum Instruction Execution Time  Interrupts RESET, Watchdog, External 0 to 2, External 3 (LQFP080-P-1414A : Not mounted), External 4 (key interrupt dedicated), Timer 0 to 3, Timer 6, Timer 7 (2 systems), Timer 8 (2 systems), Time base, Serial 0 (2 systems), Serial 2, A/D conversion finish Timer counter 0 : 8-bit × 1 (square-wave/8-bit PWM output, event count, generation of remote control carrier, simple pulse width measurement) (square-wave/PWM output to large current terminal P50 possible) Clock source................ 1/2, 1/4 of system clock frequency; 1/1, 1/4, 1/16, 1/32, 1/64 of OSC oscillation clock frequency; 1/1 of XI oscillation clock frequency; external clock input Interrupt source ........... coincidence with compare register 0 Timer counter 1 : 8-bit × 1 (square-wave output, event count, synchronous output event) Clock source................ 1/2, 1/8 of system clock frequency; 1/1, 1/4, 1/16, 1/8192, ...