UNISONIC TECHNOLOGIES CO., LTD
MP2510
Preliminary PNP EPITAXIAL SILICON TRANSISTOR
PNP TRANSISTOR
DESCRIPTION
The ...
UNISONIC TECHNOLOGIES CO., LTD
MP2510
Preliminary PNP EPITAXIAL SILICON TRANSISTOR
PNP TRANSISTOR
DESCRIPTION
The UTC MP2510 is a PNP transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown
voltage, etc.
The UTC MP2510 is suitable for automobile power
amplifiers, etc.
FEATURES
* High DC current gain (Min = 40@VCE = 4V, IC = 12A) * High collector-emitter breakdown
voltage (Min = -100V)
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MP2510L-x-T3P-T
MP2510G-x-T3P-T
Pin Assignment: B: Base C: Collector E: Emitter
Package TO-3P
Pin Assignment 123 BCE
Packing Tube
www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 3
QW-R214-021.a
MP2510
Preliminary PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base
Voltage
VCBO
-100
V
Collector-Emitter
Voltage
VCEO
-100
V
Emitter-Base
Voltage
VEBO
-6
V
Collector Current
IC -25 A
Base Current Collector Power Dissipation (TC=25°C)
IB Pc
-5 A 125 W
Junction Temperature
TJ 150 °C
Storage Temperature
TSTG
-55~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA =25°C)
PARAMETER Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitt...