DatasheetsPDF.com

MP4006 Datasheet

Part Number MP4006
Manufacturers Toshiba
Logo Toshiba
Description Power Transistor
Datasheet MP4006 DatasheetMP4006 Datasheet (PDF)

MP4006 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4006 High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications Unit: mm · · · Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : IC (DC) = ±2 A (max) High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-base vol.

  MP4006   MP4006






Part Number MP400FC
Manufacturers APEX
Logo APEX
Description Power Operational Amplifiers RoHS
Datasheet MP4006 DatasheetMP400FC Datasheet (PDF)

MP400FC Power Operational Amplifiers RoHS COMPLIANT FEATURES • Low Cost • Wide Common Mode Range • Standard Supply Voltage • Single Supply: 10V to 50V SMPS input • Output Current: 150 mA Continuous • Output Voltage 50V to 340V (single supply) • 350 V/µs Slew Rate • 200 kHz Power Bandwidth • On-board Power Supply APPLICATIONS • Piezoelectric Positioning and Actuation • Electrostatic Deflection • Deformable Mirror Actuators • Chemical and Biological Stimulators DESCRIPTION The MP400FC combine.

  MP4006   MP4006







Part Number MP4009
Manufacturers Toshiba
Logo Toshiba
Description Power Transistor
Datasheet MP4006 DatasheetMP4009 Datasheet (PDF)

MP4009 TOSHIBA Power Transistor Module Silicon PNP Triple Diffused Type (Four Darlington Power Transistors in One) MP4009 High Power Switching Applications Hammer Drive, Pulse Motor Drive Inductive Load Switching Industrial Applications Unit: mm • • • • • Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) High collector current: IC (DC) = −5 A (max) High DC current gain: hFE = 1000 (min) (VCE = −3 V, IC = −3 A) Complementar.

  MP4006   MP4006







Part Number MP4005W
Manufacturers MCC
Logo MCC
Description (MP4005W - MP4010W) Single Phase Bridge Rectifier
Datasheet MP4006 DatasheetMP4005W Datasheet (PDF)

www.DataSheet4U.com MCC TM MP4005W   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Micro Commercial Components THRU MP4010W 40 Amp Single Phase Bridge Rectifier 50 to 1000 Volts MP-50W B Features • • • • Mounting Hole For #8 Screw Plastic Case with Metal Bottom Any Mounting Position Surge Rating Of 400 Amps Maximum Ratings • • Operating Temperature: -50 °C to +150°C Storage Temperature: -50°C to +150°C Device Marking Maxi.

  MP4006   MP4006







Part Number MP4005
Manufacturers MCC
Logo MCC
Description (MP4005 - MP4010) Bridge Rectifier
Datasheet MP4006 DatasheetMP4005 Datasheet (PDF)

MCC Features • • • • Mounting Hole For #8 Screw Plastic Case With Metal Bottom Any Mounting Position Surge Rating Of 400 Amps   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MP4005 THRU MP4010 40 Amp Single Phase Bridge Rectifier 50 to 1000 Volts MP-50 B Maximum Ratings • • Operating Temperature: -50 °C to +150°C Storage Temperature: -50°C to +150°C Device Marking Maximum Recurrent Peak Reverse Voltage 50V 100V 200V 400V 600V.

  MP4006   MP4006







Power Transistor

MP4006 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4006 High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications Unit: mm · · · Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : IC (DC) = ±2 A (max) High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating NPN 80 80 8 2 3 0.5 2.0 PNP −80 −80 −8 −2 −3 −0.5 Unit V V V JEDEC A A W ― ― 2-25A1B JEITA TOSHIBA Weight: 2.1 g (typ.) PT Tj Tstg 4.0 150 −55 to 150 W °C °C Array Configuration R1 R2 10 6 8 7 3 9 5 2 4 R1 R2 1 R1 ≈ 4 kΩ R2 ≈ 800 Ω 1 2002-11-20 MP4006 Thermal Characteristics Characteristics Thermal resistance of junction to ambient (4 devices operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 °C Symbol Max Unit ΣRth (j-a) 31.3 °C/W Electrical Characteristics (Ta = 25°C) (NPN transistor) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emit.


2005-08-15 : HD6413xxx    HD64132xx    D221I    D221RP    D221RW    D221RPI    D221    MTP6N60E    MTP6N60    MTP6N10   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)