MP4208

MP4208 TOSHIBA Power MOS FET Module Silicon P Channel MOS Type (Four L2-π-MOSV in One) MP4208 High Power High Speed Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching −4 V gate drive available Small package by full molding (SIP 10 pin) High drain power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) Low drain-source ON resistance: RDS (ON) = 0.2 Ω (typ.) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = −100 µA (max) (VDS = −60 V) Enhancement-mode: Vth = −0.8 to −2.0 V (ID = −1 mA) Industrial Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current Peak drain current Drain power dissipation (1-device operation, Ta = 25°C) Drain power dissipation (4-device operation, Ta = 25°C) Channel temperature Storage temperature range Symbol VDSS VGSS ID IDP PD Rating −60 ±20 −5 −10 2.0 Unit V V A A W JEDEC JEITA TOSHIBA ― ― 2-25A1D Weight: 2.1 g (typ.) PDT Tch Tstg 4.0 150 −55 to 150 W °C °C Array Configuration 1 2 4 6 8 10 3 5 7 9 Marking MP4208 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2004-07-01 MP4208 Thermal Characteristics Characteristics Thermal resistance from channel to ambient (4-device operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 °C Symbol Max Unit ΣRth (ch-a) 31.3 °C/W This transistor is an electr...