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MP4304
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Ty...
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MP4304
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
MP4304
High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
Industrial Applications Unit: mm
· · · ·
Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : PT = 4.4 W (Ta = 25°C) High collector current: IC (DC) = 3 A (max) High DC current gain: hFE = 600 (min) (VCE = 2 V, IC = 1 A)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating 80 80 7 3 5 0.5 2.2 Unit V V V A A W
JEDEC JEITA TOSHIBA
― ― 2-32C1B
Weight: 3.9 g (typ.)
PT Tj Tstg
4.4 150 −55 to 150
W °C °C
Array Configuration
2 3 4 9 10 11
1 6
5
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2002-11-20
www.DataSheet4U.com
MP4304
Thermal Characteristics
Characteristics Thermal resistance of junction to ambient (4 devices operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 °C Symbol Max Unit
ΣRth (j-a)
28.4
°C/W
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-...
