Low OperatingVoltage, High fT Bipolar Microwave Transistors
Features •Designed for Battery Operation •fT to 10 GHz •Low ...
Low Operating
Voltage, High fT Bipolar Microwave Transistors
Features Designed for Battery Operation fT to 10 GHz Low
Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and Chips Av ailable Can be Screened to JANTX, JANTXV Equiv alent Lev els Description The MP4T6365 family of low v oltage, high gain bandwidth silicon NPN bipolar transistors prov ides low noise figure and high gain at low bias v oltages. These transistors are especially attractiv e for low operating v oltage low noise
amplifiers or driv er
amplifiers at frequencies to 4 GHz. They are also useful for low phase noise local oscillators and VCOs in battery operated equipment to 10 GHz. The MP4T6365 family was designed to hav e low noise figure at operating v oltages as low as 3 v olts. These transistors also exhibit low phase noise in VCOs operating at 5 v olts or less. Because this transistor family was specifically designed to perate from low bias v oltage, it has superior phase noise in comparison to similar current bipolar transistors www.DataSheet4U.com with higher collector breakdown v oltage when operating under the same low v oltage conditions. The MP4T6365 series transistors are av ailable in hermetic Micro-X packages, the SOT-23, the SOT-143, and in chip form (MP4T636500). Other stripline and hermetic packages are av ailable. The chip and hermetic packages can be screened to JANTX, JANTXV equiv alent lev els. The plastic parts can be supplied on ta...