MP4TD0400

M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features Cascadable 50Ω Gain Block 3dB Bandwidth: DC to 3.2 GHz 9.0 dB Typical Gain @ 1.0 GHz Unconditionally Stable (k>1) RF Input MP4TD0400 Chip Outline Drawing1,2,3,4 Description M-Pulse's MP4TD0400 is a high performance silicon bipolar MMIC chip. The MP4TD0400 is designed for use where a general purpose 50Ω gain block is required. Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications. The MP4TD0400 is fabricated using a 10 GHz f T silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability. TYPICAL POWER GAIN vs FREQUENCY 10 9 8 Id = 5 0 mA 7 6 Gain (dB) 5 4 3 2 1 Ga in Fla t t o DC 0 0.1 www.DataSheet4U.com 1 Fre que nc y (GH z) 10 375 µ (14.8 mil) Ground Optional RF Output & +5.25 Volts 375 µ (14.8 mil) Notes: (unless otherwise specified) 1. Chip Thickness is 120 µ m; 4.8 mils 2. Bond Pads are 40 µ m; 1.6 mils typical in diameter 3. RF Output Contact & +DC Voltage Is Normally Made On Backside Of Chip At Die Attach 4. Tolerance:µ m .xx = ±.13; mil .x = ±.5 Ordering Information Model No. MP4TD0400 GEL MP4TD0400 WAF MP4TD0400 TF Type of Carrier GEL PACK Waffle Pack Tape Frame Electrical Specifications @ T A = +25°C, Id = 50 mA; Zo = 50Ω Symbol Parameters Test Conditions Gp Power Gain (S212) f = 0.1 GHz Gain Flatness f = 0.1 to 2.0 GHz ∆Gp f 3 dB 3 dB Bandwidth SWRin Input SWR f =...