MP6759

MP6759 TOSHIBA GTR Module Silicon N Channel IGBT MP6759 Motor Control Applications High Power Switching Applications Unit: mm · · · · · The electrodes are isolated from case. 6 IGBTs are built into 1 package. Enhancement-mode Low saturation voltage : VCE (sat) = 2.7 V (max) (IC = 10 A) High speed: tf = 0.35 µs (max) (IC = 10 A) JEDEC JEITA TOSHIBA ― ― 2-78A1A Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― Weight: 44 g (typ.) Rating 600 ±20 10 20 10 20 40 150 −40 to 125 2500 (AC 1 minute) 1.5 Unit V V A Forward current A Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque W °C °C V N·m 1 2002-11-20 MP6759 Equivalent Circuit + GU (BU) GV (BV) GW (BW) U V W GX (BX) − GY (BY) GZ (BZ) Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance tf toff VF trr Rth (j-c) IF = 10 A, VGE = 0 V IF = 10 A, di/dt = −100 A/µs Transistor Diode Symbol IGES ICES VGE (off) VCE (sat) Cies tr 30 Ω ton 15 V 0V −15 V 100 Ω Test Condition VGE = ±20 V, VCE = 0 V VCE = 600 V, VGE = 0 V IC = 1 mA, VCE = 5 V IC = 10 A, VGE = 15 V VCE = 10 V, VGE = ...