MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Complementary Pair
Transistors
NPN/PNP Silicon
14 13 12 11 10 9 8
123456...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Complementary Pair
Transistors
NPN/PNP Silicon
14 13 12 11 10 9 8
1234567
MPQ6100A TYPE A
14 13 12 11 10 9 8
COMPLEMENTARY
1234567
MPQ6600A1 TYPE B
MAXIMUM RATINGS
Rating
Symbol
MPQ6100A MPQ6600A1
Unit
Collector – Emitter
Voltage Collector – Base
Voltage Emitter – Base
Voltage Collector Current — Continuous
VCEO VCBO VEBO
IC
45
60
5.0
50
Each Transistor
Four Transistors Equal Power
Vdc Vdc Vdc mAdc
Total Device Dissipation
@ TA = 25°C Derate above 25°C
PD 500
4.0
900 mW 7.2 mW/°C
Total Device Dissipation
@ TC = 25°C Derate above 25°C
PD 0.825
6.7
2.4 Watts 19.2 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Thermal Resistance(1)
Characteristic
Each Die Effective, 4 Die
Junction to Case
151 52
Coupling Factors
Q1–Q4 or Q2–Q3 Q1–Q2 or Q3–Q4
34 2.0
1. RθJA is measured with the device soldered into a typical printed circuit board....
