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MPQ6700 Datasheet

Part Number MPQ6700
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description SILICON COMPLEMENTARY QUAD TRANSISTOR
Datasheet MPQ6700 DatasheetMPQ6700 Datasheet (PDF)

MPQ6700 SILICON COMPLEMENTARY QUAD TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ6700 is comprised of two 2N3904 (NPN) chips and two 2N3906 (PNP) chips to be used as dual complementary pairs for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-116 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (per transistor) Power.

  MPQ6700   MPQ6700






Part Number MPQ6700
Manufacturers Motorola
Logo Motorola
Description Quad Complementary Pair Transistor
Datasheet MPQ6700 DatasheetMPQ6700 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Complementary Pair Transistor NPN/PNP Silicon 14 13 12 11 10 9 8 COMPLEMENTARY 1234567 TYPE B MPQ6700 MPQ6502 For Specifications, See MPQ6001 Data MPQ6600A1 For Specifications, See MPQ6100A Data MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous VCEO VCBO VEBO IC 40 40 5.0 200 Each Transistor Four Transistors Equal Power Vdc Vdc Vdc mAdc T.

  MPQ6700   MPQ6700







SILICON COMPLEMENTARY QUAD TRANSISTOR

MPQ6700 SILICON COMPLEMENTARY QUAD TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ6700 is comprised of two 2N3904 (NPN) chips and two 2N3906 (PNP) chips to be used as dual complementary pairs for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-116 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (per transistor) Power Dissipation (total package) Operating and Storage Junction Temperature Thermal Resistance (total package) SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C) SYMBOL TEST CONDITIONS MIN ICBO VCB=30V IEBO VEB=4.0V BVCBO IC=10μA 40 BVCEO IC=10mA 40 BVEBO IE=10μA 5.0 VCE(SAT) IC=10mA, IB=1.0mA VBE(SAT) IC=10mA, IB=1.0mA hFE VCE=1.0V, IC=0.1mA 30 hFE VCE=1.0V, IC=1.0mA 50 hFE VCE=1.0V, IC=10mA 70 fT VCE=20V, IC=10mA, f=100M.


2017-05-13 : BC328    BM92A11MWV-Z    ADM1272    LC05732ARA    MPQ7093    MPQ7092    MPQ6700    MPQ6427    MMBT6427    2N6427   


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