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MPQ7093 Datasheet

Part Number MPQ7093
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description SILICON HIGH VOLTAGE QUAD PNP TRANSISTOR
Datasheet MPQ7093 DatasheetMPQ7093 Datasheet (PDF)

MPQ7093 SILICON HIGH VOLTAGE QUAD PNP TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ7093 is comprised of four independent PNP silicon transistors mounted in a 14-pin DIP, designed for high voltage amplifier applications. MARKING: FULL PART NUMBER TO-116 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (per transistor) Power Dissipation (total package.

  MPQ7093   MPQ7093






Part Number MPQ7093
Manufacturers Motorola
Logo Motorola
Description (MPQ7091 / MPQ7093) Quad Amplifier Transistors
Datasheet MPQ7093 DatasheetMPQ7093 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPQ7091/D Quad Amplifier Transistors PNP Silicon 14 13 12 11 10 9 8 COMPLEMENTARY 1 2 3 4 TYPE B 5 6 7 MPQ7091 MPQ7093* *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC MPQ7091 –150 –150 –5.0 –500 Four Die Equal Power 1700 13.6 3.2 25.6 mW mW/°C Watts mW/°C °C MPQ7093 –250 –250 Unit Vdc Vdc Vdc mAdc .

  MPQ7093   MPQ7093







SILICON HIGH VOLTAGE QUAD PNP TRANSISTOR

MPQ7093 SILICON HIGH VOLTAGE QUAD PNP TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ7093 is comprised of four independent PNP silicon transistors mounted in a 14-pin DIP, designed for high voltage amplifier applications. MARKING: FULL PART NUMBER TO-116 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (per transistor) Power Dissipation (total package) Power Dissipation (TC=25°C) (total package) Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD PD PD TJ, Tstg 250 250 5.0 500 750 1700 3.0 -65 to +150 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=180V IEBO VEB=3.0V BVCBO IC=100μA 250 BVCEO IC=1.0mA 250 BVEBO IE=100μA 5.0 VCE(SAT) IC=20mA, IB=2.0mA VBE(SAT) IC=20mA, IB=2.0mA hFE VCE=10V, IC=1.0mA 25 hFE VCE=10V, IC=10mA 35 hFE VCE=10V, IC=30mA 25 .


2017-05-13 : BC328    BM92A11MWV-Z    ADM1272    LC05732ARA    MPQ7093    MPQ7092    MPQ6700    MPQ6427    MMBT6427    2N6427   


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