MPS651

SEMICONDUCTOR TECHNICAL DATA VOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USE B MPS651 EPITAXIAL PLANAR NPN TRANSISTOR C FEATURES ᴌHigh Current : IC(Max.)=1A. ᴌHigh Transition Frequency : fT=150MHz(Typ.). ᴌWide Area of Safe Operation. ᴌComplementary to MPS751. K D G N E A ᴌHigh Voltage : VCEO=60V(Min.). H MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg RATING 80 60 5 1 2 625 150 -55ᴕ150 UNIT L F F 1 2 3 V V V A mW ᴱ ᴱ M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. BASE 3. COLLECTOR TO-92 Collector Power Dissipation Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitanc Note : hFE(1) Classification SYMBOL ICBO IEBO hFE(1) hFE(2) V(BR)CEO VCE(sat) VBE(sat) fT Cob Y:100ᴕ200 , GR:160ᴕ320 TEST CONDITION VCB=50V, IE=0 VEB=4V, IC=0 VCE=2V, IC=50mA VCE=2V, IC=1A IC=1mA, IB=0 IC=500mA, IB=50mA IC=500mA, IB=50mA VCE=10V, IC=50mA VCB=10V, IE=0, f=1MHz MIN. 100 30 60 TYP. 0.15 0.85 150 12 MAX. 100 100 320 0.5 1.2 V V V MHz pF UNIT nA nA 1999. 11. 30 Revision No : 2 1...