MPS6727

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS6726/D One Watt Amplifier Transistor PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MPS6726 MPS6727 MAXIMUM RATINGS Rating Collector – Emitter Voltage MPS6726 MPS6727 Collector – Base Voltage MPS6726 MPS6727 Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO –40 –50 –5.0 –1.0 1.0 8.0 2.5 20 – 55 to +150 Vdc Adc Watts mW/°C Watts mW/°C °C Symbol VCEO –30 –40 Vdc Value Unit Vdc 1 2 3 CASE 29–05, STYLE 1 TO–92 (TO–226AE) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCB = –40 Vdc, IE = 0) (VCB = –50 Vdc, IE = 0) Emitter Cutoff Current (VEB = –5.0 Vdc, IC = 0) MPS6726 MPS6727 IEBO V(BR)CEO MPS6726 MPS6727 V(BR)CBO MPS6726 MPS6727 V(BR)EBO ICBO — — — –0.1 –0.1 –0.1 µAdc –40 –50 –5.0 — — — Vdc µAdc –30 –40 — — Vdc Vdc Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997...