MPS751

MPS751 MPS751 Silicon PNP Transistor (Note 1) Low Saturation Voltage 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO IC PC TJ TSTG Parameter Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Ta=25°C) (Note 2, 3) Junction Temperature Storage Temperature Value -60 2 625 150 - 55 ~ 150 Units V A mW °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC = 100µA IC = 10mA IE = 10µA VCB = 30V VEB = 3V VCE = 2V, IC = 50mA VCE = 2V, IC = 500mA VCE = 2V, IC = 1A VCE = 2V, IC = 2A IC = 2A, IB = 200mA IC = 1A, IB = 100mA IC = 1A, IB = 100mA VCE = 5V, IC = 2mA VCE = 5V, IC = 50mA f = 100MHz 75 75 75 75 40 0.5 0.3 1.2 1 V V V MHz Min. -80 -60 -5 100 100 Typ. Max. Units V V V nA nA VCE(sat) VBE(sat) VBE(on) fT Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current gain Bandwidth Product Notes: 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings are based on a maximum junction temperature of 150degrees C. ©2002 Fairchild Semiconductor Corpora...